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BD537KTU

BD537KTU

BD537KTU

ON Semiconductor

BD537KTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD537KTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD537
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
BD537KTU Product Details

BD537KTU Overview


In this device, the DC current gain is 40 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.The device has a 80V maximal voltage - Collector Emitter Breakdown.

BD537KTU Features


the DC current gain for this device is 40 @ 2A 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-220-3

BD537KTU Applications


There are a lot of ON Semiconductor BD537KTU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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