BD537KTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD537KTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD537
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD537KTU Product Details
BD537KTU Overview
In this device, the DC current gain is 40 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BD537KTU Features
the DC current gain for this device is 40 @ 2A 2V the vce saturation(Max) is 800mV @ 200mA, 2A the supplier device package of TO-220-3
BD537KTU Applications
There are a lot of ON Semiconductor BD537KTU applications of single BJT transistors.