BD677ASTU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Collector current can be as low as 4A volts at its maximum.

BD677ASTU Features

the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz

BD677ASTU Applications

There are a lot of ON Semiconductor BD677ASTU applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver