BD679AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD679AG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD679
Pin Count
3
Number of Elements
1
Polarity
NPN
Voltage
80V
Element Configuration
Single
Current
2A
Power Dissipation
40W
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
1MHz
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.77000
$0.77
10
$0.67700
$6.77
100
$0.51910
$51.91
500
$0.41034
$205.17
1,000
$0.32827
$0.32827
BD679AG Product Details
BD679AG Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.There is a transition frequency of 1MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD679AG Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 1MHz
BD679AG Applications
There are a lot of ON Semiconductor BD679AG applications of single BJT transistors.