BDW23ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW23ATU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW23
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
BDW23ATU Product Details
BDW23ATU Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 3V @ 60mA, 6A means Ic has reached its maximum value(saturated).Supplier package TO-220-3 contains the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
BDW23ATU Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 60mA, 6A the supplier device package of TO-220-3
BDW23ATU Applications
There are a lot of ON Semiconductor BDW23ATU applications of single BJT transistors.