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BDW23ATU

BDW23ATU

BDW23ATU

ON Semiconductor

BDW23ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW23ATU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW23
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 6A
BDW23ATU Product Details

BDW23ATU Overview


In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 3V @ 60mA, 6A means Ic has reached its maximum value(saturated).Supplier package TO-220-3 contains the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

BDW23ATU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3

BDW23ATU Applications


There are a lot of ON Semiconductor BDW23ATU applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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