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BDW23BTU

BDW23BTU

BDW23BTU

ON Semiconductor

BDW23BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW23BTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW23
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 6A
BDW23BTU Product Details

BDW23BTU Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 60mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

BDW23BTU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3

BDW23BTU Applications


There are a lot of ON Semiconductor BDW23BTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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