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BDW46G

BDW46G

BDW46G

ON Semiconductor

BDW46G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW46G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 85W
Peak Reflow Temperature (Cel) 260
Current Rating -15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 85W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 50mA, 10A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Height 15.75mm
Length 10.53mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.98000 $0.98
50 $0.83560 $41.78
100 $0.68630 $68.63
500 $0.56698 $283.49
BDW46G Product Details

BDW46G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 15A is essential for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Collector current can be as low as 15A volts at its maximum.

BDW46G Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 4MHz

BDW46G Applications


There are a lot of ON Semiconductor BDW46G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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