BDW46G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW46G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
85W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
85W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 50mA, 10A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
15A
Height
15.75mm
Length
10.53mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.98000
$0.98
50
$0.83560
$41.78
100
$0.68630
$68.63
500
$0.56698
$283.49
BDW46G Product Details
BDW46G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 15A is essential for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Collector current can be as low as 15A volts at its maximum.
BDW46G Features
the DC current gain for this device is 1000 @ 5A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 50mA, 10A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 4MHz
BDW46G Applications
There are a lot of ON Semiconductor BDW46G applications of single BJT transistors.