BDW47G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW47G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
85W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
85W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 50mA, 10A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
15A
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.534031
$1.534031
10
$1.447199
$14.47199
100
$1.365282
$136.5282
500
$1.288002
$644.001
1000
$1.215096
$1215.096
BDW47G Product Details
BDW47G Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 50mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -15A.4MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BDW47G Features
the DC current gain for this device is 1000 @ 5A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 50mA, 10A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 4MHz
BDW47G Applications
There are a lot of ON Semiconductor BDW47G applications of single BJT transistors.