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BDW47G

BDW47G

BDW47G

ON Semiconductor

BDW47G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BDW47G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 85W
Peak Reflow Temperature (Cel) 260
Current Rating -15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 85W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 50mA, 10A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.534031 $1.534031
10 $1.447199 $14.47199
100 $1.365282 $136.5282
500 $1.288002 $644.001
1000 $1.215096 $1215.096
BDW47G Product Details

BDW47G Overview


In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 50mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -15A.4MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

BDW47G Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 4MHz

BDW47G Applications


There are a lot of ON Semiconductor BDW47G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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