BDX33CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX33CTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
100V
Max Power Dissipation
70W
Current Rating
10A
Base Part Number
BDX33
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
70W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
100V
hFE Min
750
Continuous Collector Current
10A
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BDX33CTU Product Details
BDX33CTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 3A 3V.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 6mA, 3A.A constant collector voltage of 10A is necessary for high efficiency.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BDX33CTU Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 6mA, 3A the current rating of this device is 10A
BDX33CTU Applications
There are a lot of ON Semiconductor BDX33CTU applications of single BJT transistors.