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BDX53TU

BDX53TU

BDX53TU

ON Semiconductor

BDX53TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDX53TU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDX53
Power - Max 60W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 8A
BDX53TU Product Details

BDX53TU Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package TO-220-3 comes with the product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BDX53TU Features


the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A
the supplier device package of TO-220-3

BDX53TU Applications


There are a lot of ON Semiconductor BDX53TU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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