BDX53TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX53TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDX53
Power - Max
60W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
BDX53TU Product Details
BDX53TU Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package TO-220-3 comes with the product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BDX53TU Features
the DC current gain for this device is 750 @ 3A 3V the vce saturation(Max) is 2V @ 12mA, 3A the supplier device package of TO-220-3
BDX53TU Applications
There are a lot of ON Semiconductor BDX53TU applications of single BJT transistors.