BF245C datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
BF245C Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
200mg
Packaging
Bulk
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.75
Voltage - Rated DC
30V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Current Rating
25mA
Base Part Number
BF245
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
350mW
Transistor Application
AMPLIFIER
Breakdown Voltage
-30V
Drain to Source Voltage (Vdss)
15V
Transistor Type
N-Channel JFET
Continuous Drain Current (ID)
25mA
Gate to Source Voltage (Vgs)
-30V
Drain Current-Max (Abs) (ID)
0.1A
FET Technology
JUNCTION
Highest Frequency Band
ULTRA HIGH FREQUENCY B
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BF245C Product Details
BF245C Description
BF245C is an N-channel amplifier manufactured by Onsemi. The onsemi BF245C is designed for VHF/UHF amplifiers. Our Very High Frequency (VHF) and Ultra High Frequency (UHF) amplifiers have a frequency range from 1 MHz to 500 MHz (low power up to 1 GHz). These VHF and UHF RF Power Amplifiers are used for a host of different applications, including military communications, antenna testing, transmitters, AM/FM repeaters, and linear particle accelerators. The BF245C is offered in the TO-92 package. It is specified for operation from –55°C to +150°C.
BF245C Features
Drain-Gate Voltage: 30v
Gate-Source Voltage: -30v
Forward Gate Current: 10mA
Operating and Storage Junction Temperature Range: -50 to 150℃