BSS123L Description
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high-speed line drivers, power management power supply, and switching applications.
BSS123L Features
0.17 A, 100V, Rois/ON)=6Q atVGs= 10V
Ros(ON)= 100atVGs=45V
High-Density Cell Design for Low RDs/ON)
Rugged and Reliable
Compact Industry Standard SOT-23 Surface Mount
Package
Very Low Capacitance
Fast Switching Speed
