BSV52 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.There is a transition frequency of 400MHz in the part.As a result, it can handle voltages as low as 12V volts.Collector current can be as low as 200mA volts at its maximum.
BSV52 Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 400MHz
BSV52 Applications
There are a lot of ON Semiconductor BSV52 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
