BUT12ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BUT12ATU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BUT12A
Power - Max
100W
Transistor Type
NPN
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
8A
BUT12ATU Product Details
BUT12ATU Overview
Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1.2A, 6A.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 450VV - Maximum voltage.
BUT12ATU Features
the vce saturation(Max) is 1.5V @ 1.2A, 6A the supplier device package of TO-220-3
BUT12ATU Applications
There are a lot of ON Semiconductor BUT12ATU applications of single BJT transistors.