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BZX84B12LT1G

  • BZX84B12LT1G
  • BZX84B12LT1G

BZX84B12LT1G

BZX84B12LT1G

ON Semiconductor

ZENER DIODE 25Ohm ±2% 12V 100nA @ 8V -65°C~150°C TJ 225mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84B12LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature UL RECOGNIZED
HTS Code 8541.10.00.50
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BZX84B12
Pin Count 3
Number of Elements 1
Working Voltage 12V
Polarity UNIDIRECTIONAL
Impedance 25Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Max Reverse Leakage Current 100nA
Impedance-Max 25Ohm
Halogen Free Halogen Free
Test Current 5mA
Reference Voltage 12V
Forward Voltage 900mV
Zener Voltage 12V
Voltage Tol-Max 1.7%
Peak Reverse Current 100nA
Voltage Tolerance 2%
ESD Protection Yes
Height 1.1176mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03264 $0.09792
6,000 $0.02944 $0.17664
15,000 $0.02560 $0.384
30,000 $0.02304 $0.6912
75,000 $0.02048 $1.536
150,000 $0.01702 $2.553
BZX84B12LT1G Product Details

BZX84B12LT1G Overview


The reverse leakage current for this electrical device should be 100nA @ 8V.1.7% indicates the maximum possible voltage (Tol) of 1.7%.A maximum reverse leakage current of 100nA is observed.For its operation, maximum voltage - Forward (Vf) 900mV @ 10mA is provided.To function properly, this device needs a reverse voltage peak of 100nA.

BZX84B12LT1G Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


BZX84B12LT1G Applications


There are a lot of ON Semiconductor
BZX84B12LT1G applications of zener single diodes.


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