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BZX84C12LT1G

  • BZX84C12LT1G
  • BZX84C12LT1G

BZX84C12LT1G

BZX84C12LT1G

ON Semiconductor

ZENER DIODE 25Ohm ±5% 12V 100nA @ 8V -65°C~150°C TJ 225mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84C12LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Material Plastic
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature UL RECOGNIZED
HTS Code 8541.10.00.50
Power Rating 225mW
Voltage - Rated DC 12V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BZX84C12
Pin Count 3
Number of Elements 1
Working Voltage 12V
Polarity UNIDIRECTIONAL
Impedance 25Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 900mV @ 10mA
Power - Max 250mW
Max Reverse Leakage Current 100nA
Impedance-Max 25Ohm
Halogen Free Halogen Free
Test Current 5mA
Reference Voltage 12V
Breakdown Voltage 12.7V
Forward Voltage 900mV
Zener Voltage 12V
Peak Reverse Current 100nA
Voltage Tolerance 5%
ESD Protection Yes
Zener Current 10mA
Height 940μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02508 $0.07524
6,000 $0.02271 $0.13626
15,000 $0.01986 $0.2979
30,000 $0.01796 $0.5388
75,000 $0.01606 $1.2045
150,000 $0.01349 $2.0235
BZX84C12LT1G Product Details

BZX84C12LT1G Overview


An electrical device such as this requires reverse leakage current of 100nA @ 8V.A maximum reverse leakage current is reached at 100nA.Design-wise, diode is highly flexible, wdiodeh a zener current of 10mA.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 900mV @ 10mA V.This device can function fully with a reverse peak voltage of 100nA.

BZX84C12LT1G Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 10mA


BZX84C12LT1G Applications


There are a lot of ON Semiconductor
BZX84C12LT1G applications of zener single diodes.


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