DTA114EET1G

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DTA114EET1G

Manufacturer part number:DTA114EET1G

Manufacturer:ON Semiconductor

Description:DTA114EET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:DTA114EET1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	70mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	DTA114
Pin Count	3
Output Voltage	300mV
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	250mV
Max Breakdown Voltage	50V
hFE Min	35
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 k Ω
Height	900μm
Length	1.65mm
Width	900μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free