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DTC114EET1G

DTC114EET1G

DTC114EET1G

ON Semiconductor

DTC114EET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

DTC114EET1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 70mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTC114
Pin Count 3
Output Voltage 300mV
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
Height 750μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02768 $0.08304
6,000 $0.02505 $0.1503
15,000 $0.02190 $0.3285
30,000 $0.01980 $0.594
75,000 $0.01770 $1.3275
150,000 $0.01490 $2.235
DTC114EET1G Product Details

DTC114EET1G Description


The DTC114EET1G is an NPN Bipolar Digital Transistor (BRT)  designed to replace a single device and its external resistor bias network.



DTC114EET1G Features


Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable



DTC114EET1G Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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