DTC114EM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
DTC114EM3T5G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
260mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DTC114
Pin Count
3
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
260mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
35
Resistor - Base (R1)
10 k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
10 k Ω
Height
550μm
Length
1.25mm
Width
850μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
8,000
$0.05256
$0.42048
16,000
$0.04500
$0.72
24,000
$0.04248
$1.01952
56,000
$0.03996
$2.23776
200,000
$0.03576
$7.152
DTC114EM3T5G Product Details
DTC114EM3T5G Description
The ON Semiconductor DTC114EM3T5G is a Digital Transistor (BRT) (R1 = 10 kΩ, R2 = 10 kΩ) with a single transistor and a monolithic bias network made up of two resistors: a series base resistor and a base-emitter resistor.
DTC114EM3T5G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable