Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DTC114YET1G

DTC114YET1G

DTC114YET1G

ON Semiconductor

TRANS PREBIAS NPN 200MW SC75

SOT-23

DTC114YET1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.21
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DTC114
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 800μm
Length 1.65mm
Width 900μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02768 $0.08304
6,000 $0.02505 $0.1503
15,000 $0.02190 $0.3285
30,000 $0.01980 $0.594
75,000 $0.01770 $1.3275
150,000 $0.01490 $2.235
DTC114YET1G Product Details
The ON Semiconductor DTC114YET1G is a single, pre-biased bipolar junction transistor (BJT) designed for use in a wide range of applications. It is a NPN transistor with a maximum collector current of 200 mA and a maximum collector-emitter voltage of 40 V. The device is housed in a SC-75 package, which is a small surface-mount package with a footprint of only 2.0 mm x 1.25 mm.

The DTC114YET1G is designed to provide excellent performance in a wide range of applications, including power management, audio amplifiers, and switching circuits. It features a low saturation voltage, high gain, and low noise. The device is pre-biased, meaning that it is already biased to a certain voltage and current, making it easier to use in applications where the bias point needs to be set quickly.

The DTC114YET1G is an ideal choice for applications where space is limited, such as portable electronics and consumer products. It is also suitable for use in automotive and industrial applications.

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News