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DTC115EM3T5G

  • DTC115EM3T5G
  • DTC115EM3T5G

DTC115EM3T5G

DTC115EM3T5G

ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

SOT-23

DTC115EM3T5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 260mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTC115
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 260mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Resistor - Base (R1) 100 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 100 k Ω
Height 550μm
Length 1.25mm
Width 850μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
8,000 $0.04818 $0.38544
16,000 $0.04125 $0.66
24,000 $0.03894 $0.93456
56,000 $0.03663 $2.05128
200,000 $0.03278 $6.556
DTC115EM3T5G Product Details
The ON Semiconductor DTC115EM3T5G is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of applications. It is a NPN transistor with a maximum collector current of 260 mW and a maximum collector-emitter voltage of 40 V. The device is housed in a SOT-723 package and is designed to provide a low-cost solution for applications requiring a pre-biased transistor.

Features of the DTC115EM3T5G include:
• Low-cost solution for applications requiring a pre-biased transistor
• Maximum collector current of 260 mW
• Maximum collector-emitter voltage of 40 V
• Housed in a SOT-723 package

Applications of the DTC115EM3T5G include:
• Automotive
• Industrial
• Consumer electronics
• Power management
• Lighting
• Telecommunications

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