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DTC124XET1G

DTC124XET1G

DTC124XET1G

ON Semiconductor

TRANS PREBIAS NPN 200MW SC75

SOT-23

DTC124XET1G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.47
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTC124
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Resistor - Base (R1) 22 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 800μm
Length 1.65mm
Width 900μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03127 $0.09381
6,000 $0.02831 $0.16986
15,000 $0.02475 $0.37125
30,000 $0.02237 $0.6711
75,000 $0.02000 $1.5
150,000 $0.01684 $2.526
DTC124XET1G Product Details
The ON Semiconductor DTC124XET1G is a single, pre-biased bipolar junction transistor (BJT) designed for use in a wide range of applications. It is a NPN transistor with a maximum collector current of 200 mA and a maximum collector-emitter voltage of 40 V. The device is housed in a SC-75 package, which is a small surface-mount package with a footprint of only 2.0 mm x 1.25 mm.

The DTC124XET1G is designed to provide a low-cost, low-power solution for applications such as switching, amplification, and signal conditioning. It features a low saturation voltage, high gain, and fast switching speed. The device is pre-biased, meaning that it is already biased to a certain voltage and current level, allowing for easy integration into existing circuits.

The DTC124XET1G is ideal for use in a variety of applications, including automotive, consumer electronics, industrial, and medical. It is also suitable for use in high-temperature environments, making it an ideal choice for applications that require reliable performance in extreme conditions.

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