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EC3A04B-3-TL-H

EC3A04B-3-TL-H

EC3A04B-3-TL-H

ON Semiconductor

EC3A04B-3-TL-H datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

EC3A04B-3-TL-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Element Configuration Single
Power Dissipation 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 10mA
Gate to Source Voltage (Vgs) -30V
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 200Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Resistance - RDS(On) 200Ohm
RoHS Status RoHS Compliant
EC3A04B-3-TL-H Product Details

EC3A04B-3-TL-H Description


The EC3A04B-3-TL-H is an N-Channel Junction Silicon FET.



EC3A04B-3-TL-H Features


  • Small IGSS.

  • Small Ciss.

  • The ultraminiature package facilitates miniaturization in end products.

  • Halogen-free compliance (UL94HB).



EC3A04B-3-TL-H Applications


  • Low-frequency general-purpose amplifier

  • Impedance conversion

  • Infrared sensor applications


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