EMG2DXV5T1G

new-10%

Manufacturer part number:EMG2DXV5T1G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - Pre-Biased 50V Dual BRT NPN

Case Package:SOT-23

Datasheet:EMG2DXV5T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	SOT-553
Surface Mount	YES
Number of Pins	5
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	230mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	EMG
Pin Count	5
Qualification Status	Not Qualified
Number of Elements	2
Polarity	NPN
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation	230mW
Transistor Application	SWITCHING
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	80
Resistor - Base (R1)	47k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47k Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free