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EMT1DXV6T5G

EMT1DXV6T5G

EMT1DXV6T5G

ON Semiconductor

Dual PNP Bipolar Transistor

SOT-23

EMT1DXV6T5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Voltage - Rated DC -60V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number EMT
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.446000 $0.446
10 $0.420755 $4.20755
100 $0.396938 $39.6938
500 $0.374470 $187.235
1000 $0.353274 $353.274

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