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FCA47N60

FCA47N60

FCA47N60

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 23.5A, 10V ±30V 8000pF @ 25V 270nC @ 10V TO-3P-3, SC-65-3

SOT-23

FCA47N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series SuperFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 47A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Turn On Delay Time 185 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 520 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.07Ohm
Drain to Source Breakdown Voltage 600V
Nominal Vgs 5 V
Height 20.1mm
Length 16.2mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.42000 $8.42
10 $7.60300 $76.03
450 $5.80982 $2614.419
900 $4.92947 $4436.523
1,350 $4.66861 $4.66861
FCA47N60 Product Details

FCA47N60 Description


After the high voltage super-junction (SJ) technology was developed, FCA47N60 SupreMOS? MOSFET came to being based on charge balance technology. Based on the sophisticated technology and process, FCA47N60  is specially tailored to provide low on-resistance, low gate charge, and superior switching performance. FCA47N60 SupreMOS? MOSFET is ideally suitable for various applications, including solar inverters, AC-DC power supply, etc. 



FCA47N60 Features


  • Low on-resistance

  • Low gate charge

  • Low conduction loss

  • Superior switching performance

  • Available in TO-3PN package



FCA47N60 Applications


  • PFC (power factor correction)

  • Server/telecom power

  • FPD (flat panel display) TV power

  • ATX (advanced technology extended) power

  • Industrial power applications


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