FCB199N65S3

new-10%

Manufacturer part number:FCB199N65S3

Manufacturer:ON Semiconductor

Description:FCB199N65S3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCB199N65S3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperFET® III
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	98W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	199m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.4mA
Input Capacitance (Ciss) (Max) @ Vds	1225pF @ 400V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	14A
Drain-source On Resistance-Max	0.199Ohm
Pulsed Drain Current-Max (IDM)	35A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	76 mJ
RoHS Status	RoHS Compliant