FDA75N28 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDA75N28 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Series
UniFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
520W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
41mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
144nC @ 10V
Drain to Source Voltage (Vdss)
280V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.671015
$2.671015
10
$2.519826
$25.19826
100
$2.377194
$237.7194
500
$2.242636
$1121.318
1000
$2.115695
$2115.695
FDA75N28 Product Details
FDA75N28 Description
FDA75N28 is a 280V N-Channel MOSFET. The N-Channel MOSFET FDA75N28 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The advanced technology FDA75N28 has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The onsemi FDA75N28 is well suited for high efficient switched-mode power supplies and active power factor correction.