FDB029N06

new-10%

Manufacturer part number:FDB029N06

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 120A D2PAK

Case Package:SOT-23

Datasheet:FDB029N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.762g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	231W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	231W
Case Connection	DRAIN
Turn On Delay Time	39 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.1m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9815pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	151nC @ 10V
Rise Time	178ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	193A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	772A
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant