FDB6021P

new-10%

Manufacturer part number:FDB6021P

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 28A TO-263AB

Case Package:SOT-23

Datasheet:FDB6021P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263AB
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Current Rating	-28A
Number of Elements	1
Power Dissipation-Max	37W Tc
Element Configuration	Single
Power Dissipation	37W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	30mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 10V
Current - Continuous Drain (Id) @ 25°C	28A Ta
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	-28A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	1.89nF
Drain to Source Resistance	30mOhm
Rds On Max	30 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free