FDC6324L Description

ON Semiconductor's patented high-cell-density DMOS technology is used to make the FDC6324L. This extremely high-density technique is specifically designed to reduce on-state resistance and improve switching performance. These devices are well-suited for low-voltage, high-side-load switch applications that need low conduction loss and ease of driving.

FDC6324L Features

• For exceptionally low on-resistance, a high-density cell design is used.

• VON/OFF >6KV Human Body Model with Zener Protection for ESD Ruggedness.

• For enhanced thermal and electrical capabilities, the SuperSOTTM-6 package design uses a copper lead frame.

FDC6324L Applications

Switching applications