FDD5N53TM_WS

new-10%

Manufacturer part number:FDD5N53TM_WS

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 530V 4A DPAK

Case Package:SOT-23

Datasheet:FDD5N53TM_WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	UniFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	530V
RoHS Status	RoHS Compliant