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FDD8580

FDD8580

FDD8580

ON Semiconductor

FDD8580 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD8580 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252AA)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 49.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1445pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
FDD8580 Product Details

FDD8580 Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), and fast switching speed. 



FDD8580 Features

Max rDS(on) = 9m|? at VGS = 10V, ID = 35A

Max rDS(on) =13m|? at VGS = 4.5V, ID = 33A

Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V

Low gate resistance

100% Avalanche tested

RoHS compliant



FDD8580 Applications

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture




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