FDD8586

new-10%

Manufacturer part number:FDD8586

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 35A DPAK

Case Package:SOT-23

Datasheet:FDD8586 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	5.5MOhm
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	35A
Number of Elements	1
Power Dissipation-Max	77W Tc
Element Configuration	Single
Power Dissipation	77W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2480pF @ 10V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	1.6 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free