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FDG314P

  • FDG314P
  • FDG314P

FDG314P

FDG314P

ON Semiconductor

FDG314P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDG314P Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SC-88 (SC-70-6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -25V
Technology MOSFET (Metal Oxide)
Current Rating -650mA
Number of Elements 1
Power Dissipation-Max 750mW Ta
Power Dissipation 750mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 63pF @ 10V
Current - Continuous Drain (Id) @ 25°C 650mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 650mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -25V
Input Capacitance 63pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.1 Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.692229 $7.692229
10 $7.256819 $72.56819
100 $6.846056 $684.6056
500 $6.458544 $3229.272
1000 $6.092966 $6092.966
FDG314P Product Details

FDG314P Description


FDG314P is a -25v P-Channel enhancement mode field-effect transistor. The transistor FDG314P is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is tailored to minimize on-state resistance at low gate drive conditions. This onsemi FDG314P is designed especially for battery power applications such as notebook computers and cellular phones. 



FDG314P Features


  • -0.65 A, -25 V. RDS(ON) = 1.1 ? @ VGS = -4.5 V

                              RDS(ON) = 1.5 ? @ VGS = -2.7 V.

  • Very low gate drive requirements allow direct operation in a 3V circuit (VGS(th) <1.5 V).

  • Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).

  • Compact industry standard SC70-6 surface mount package.



FDG314P Applications


  • Power Management

  • Load switch

  • Signal switch

  • Fan Motor Drives

  • Enterprise Copiers

  • Set-top Boxes


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