FDG6301N-F085

new-10%

Manufacturer part number:FDG6301N-F085

Manufacturer:ON Semiconductor

Description:MOSFET 2N-CH 25V 0.22A SC70-6

Case Package:SOT-23

Datasheet:FDG6301N-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	42 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Max Power Dissipation	300mW
Terminal Form	GULL WING
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V
Rise Time	4.5ns
Drain to Source Voltage (Vdss)	25V
Fall Time (Typ)	3.2 ns
Turn-Off Delay Time	4 ns
Continuous Drain Current (ID)	220mA
Threshold Voltage	850mV
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant