FDMA1024NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDMA1024NZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Number of Pins
6
Weight
40mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
54MOhm
Subcategory
FET General Purpose Power
Max Power Dissipation
700mW
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Case Connection
DRAIN
Turn On Delay Time
5.3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
54m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
7.3nC @ 4.5V
Rise Time
2.2ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
2.2 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
700 mV
Height
750μm
Length
2mm
Width
2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.308000
$4.308
10
$4.064151
$40.64151
100
$3.834105
$383.4105
500
$3.617080
$1808.54
1000
$3.412340
$3412.34
FDMA1024NZ Product Details
FDMA1024NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1024NZ Features
Max rDS(on) = 54 m|? at VGS = 4.5 V, ID = 5.0 A
Max rDS(on) = 66 m|? at VGS = 2.5 V, ID = 4.2 A
Max rDS(on) = 82 m|? at VGS= 1.8 V, ID = 2.3 A
Max rDS(on) = 114 m|? at VGS = 1.5 V, ID = 2.0 A
HBM ESD protection level = 1.6 kV (Note 3)
Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA1024NZ Applications
This product is general usage and suitable for many different applications.