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FDMS6681Z

  • FDMS6681Z
  • FDMS6681Z

FDMS6681Z

FDMS6681Z

ON Semiconductor

FDMS6681Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS6681Z Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3.2MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 73W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 22.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10380pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21.1A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 197 ns
Turn-Off Delay Time 260 ns
Continuous Drain Current (ID) -21.1A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 2020 pF
Height 1.1mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.94500 $2.835
6,000 $0.91200 $5.472
FDMS6681Z Product Details

FDMS6681Z Description


The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.



FDMS6681Z Features


  • Max rDS(on) = 3.2 mΩ at VGS = ?10 V, ID = ?21.1 A

  • Max rDS(on) = 5.0 mΩ at VGS = ?4.5 V, ID = ?15.7 A

  • Advanced Package and Silicon Combination for Low rDS(on)

  • HBM ESD Protection Level of 8 kV Typical

  • MSL1 Robust Package Design

  • RoHS Compliant



FDMS6681Z Applications


  • Load Switch in Notebook and Server

  • Notebook Battery Pack Power Management

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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