FDMS8350LET40 Description

This N-Channel MV MOSFET FDMS8350LET40 is produced using ON Semiconductor’s advanced POWERTRENCH process that has been specially tailored to minimize the on−state resistance and yet maintain superior switching performance. The transistor FDMS8350LET40 can be applied in Primary DC−DC MOSFET, Secondary Synchronous Rectifier, and Load Switch.

FDMS8350LET40 Features

Max RDS(on) = 0.85 m at VGS = 10 V, ID = 47 A

Max RDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A

Advanced Package and Silicon combination for Low rDS(on) and High Efficiency

MSL1 Robust Package Design

100% UIL Tested

Pb−Free and RoHS Compliant

FDMS8350LET40 Applications

Primary DC−DC MOSFET

Secondary Synchronous Rectifier

Load Switch