FDMS86104

new-10%

Manufacturer part number:FDMS86104

Manufacturer:ON Semiconductor

Description:FDMS86104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86104 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Voltage	100V
Power Dissipation-Max	2.5W Ta 73W Tc
Element Configuration	Single
Current	16A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	73W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	923pF @ 50V
Current - Continuous Drain (Id) @ 25°C	7A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	3.5ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.2 ns
Turn-Off Delay Time	14.3 ns
Continuous Drain Current (ID)	16A
Threshold Voltage	2.9V
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	96 mJ
Height	1.05mm
Length	5mm
Width	6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free