FDMS8660AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS8660AS Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
2.1MOhm
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta 104W Tc
Element Configuration
Single
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.1m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5865pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
83nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
28A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.218421
$0.218421
10
$0.206058
$2.06058
100
$0.194394
$19.4394
500
$0.183390
$91.695
1000
$0.173009
$173.009
FDMS8660AS Product Details
FDMS8660AS Description
The FDMS8660AS was created to reduce losses in applications involving power conversion. The lowest rDS(on) with outstanding switching performance has been achieved by combining improvements in silicon and package technology. An effective monolithic Schottky body diode is an additional benefit of this device.
FDMS8660AS Features
Max rDS(on) = 2.1m: at VGS = 10V, ID = 28A
Max rDS(on) = 3.1m: at VGS = 4.5V, ID = 22A
Advanced Package and Silicon combination for low rDS(on) and high efficiency