FDP085N10A

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Manufacturer part number:FDP085N10A

Manufacturer:ON Semiconductor

Description:FDP085N10A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP085N10A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Configuration	Single
Power Dissipation-Max	188W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5m Ω @ 96A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2695pF @ 50V
Current - Continuous Drain (Id) @ 25°C	96A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	96A

FDP085N10A Description

The FDP085N10A N-Channel MOSFET is produced using an advanced PowerTrench?process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.