FDP15N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDP15N50 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
300W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
380mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.555090
$0.55509
10
$0.523670
$5.2367
100
$0.494028
$49.4028
500
$0.466064
$233.032
1000
$0.439683
$439.683
FDP15N50 Product Details
FDP15N50 Description
FDP15N50 is a 500v N-Channel UniFET? MOSFET. UniFET? MOSFET is Fairchild Semiconductor?ˉs high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and provide better switching performance and higher avalanche energy strength. This onsemi FDP15N50 is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDP15N50 Features
Low gate charge Qg results in a simple drive requirement(Typ. 33 nC)
Improved Gate, avalanche, and high re-applied dv/dt ruggedness
Reduced RDS(on) ( 330m? ( Typ.) @ VGS = 10 V, ID = 7.5 A)
Reduced Miller capacitance and low Input capacitance(Typ. Crss = 16 pF)