FDP16N50

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Manufacturer part number:FDP16N50

Manufacturer:ON Semiconductor

Description:FDP16N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP16N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	UniFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	200W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1945pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$0.938482	$0.938482
10	$0.885360	$8.8536
100	$0.835245	$83.5245
500	$0.787967	$393.9835
1000	$0.743365	$743.365

FDP16N50 Description

FDP16N50 is a 500v N-Channel UniFETTM MOSFET. UniFETM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET FDP16N50 is tailored to reduce on-state resistance and provide better switching performance and higher avalanche energy strength. This FDP16N50 is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.