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FDP8878

FDP8878

FDP8878

ON Semiconductor

FDP8878 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDP8878 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 40.5W Tc
Element Configuration Single
Power Dissipation 40.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1235pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 244ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35.3 ns
Turn-Off Delay Time 14.8 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
FDP8878 Product Details


FDP8878   Description


 This N-channel MOSFET is specifically designed to improve the overall efficiency of DC/DC converters using the following technologies synchronous or conventional switching PWM controllers. It has been optimized for low gate characteristics (conduction) and fast switching speed.

 

FDP8878     Features


TDS(ON)= 15mΩ,VGs=10VID=40A

TDS(ON)=19mΩVGs=4.5VID=36A

High performance trench technologyfor extremely low DS(ON)

Low gate charge

. High power and current handling capability

.RoHS Compliant

 

FDP8878     Applications

low gate characteristics (conduction) and fast switching speed


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