FDP8878 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDP8878 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
1.8g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Power Dissipation-Max
40.5W Tc
Element Configuration
Single
Power Dissipation
40.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1235pF @ 15V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Rise Time
244ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
35.3 ns
Turn-Off Delay Time
14.8 ns
Continuous Drain Current (ID)
40A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FDP8878 Product Details
FDP8878 Description
This N-channel MOSFET is specifically designed to improve the overall efficiency of DC/DC converters using the following technologies synchronous or conventional switching PWM controllers. It has been optimized for low gate characteristics (conduction) and fast switching speed.
FDP8878 Features
TDS(ON)= 15mΩ,VGs=10V,ID=40A
TDS(ON)=19mΩVGs=4.5VID=36A
High performance trench technologyfor extremely low DS(ON)
Low gate charge
. High power and current handling capability
.RoHS Compliant
FDP8878 Applications
low gate characteristics (conduction) and fast switching speed