FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDPC8011S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Surface Mount
Number of Pins
8
Weight
192mg
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Power
Max Power Dissipation
900mW
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Transistor Application
SWITCHING
Rise Time
5ns
Drain to Source Voltage (Vdss)
25V
Polarity/Channel Type
N-CHANNEL
Fall Time (Typ)
4 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
27A
Threshold Voltage
1.4V
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
13A
Drain to Source Breakdown Voltage
25V
Input Capacitance
1.24nF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance
1.2mOhm
Rds On Max
6 mΩ
Nominal Vgs
1.4 V
Height
800μm
Length
3.4mm
Width
3.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$1.68977
$5.06931
6,000
$1.62624
$9.75744
FDPC8011S Product Details
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.