FDS7064N7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDS7064N7 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7mOhm @ 16.5A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3355pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16.5A Ta
Gate Charge (Qg) (Max) @ Vgs
48nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±12V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.166351
$0.166351
10
$0.156935
$1.56935
100
$0.148052
$14.8052
500
$0.139671
$69.8355
1000
$0.131765
$131.765
FDS7064N7 Product Details
FDS7064N7 Description
FDS7064N7 N-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS7064N7 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS7064N7 ON Semiconductor is a general-purpose device and can be used in a variety of applications.