FDT55AN06LA0

new-10%

Manufacturer part number:FDT55AN06LA0

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 12.1A SOT223-4

Case Package:SOT-23

Datasheet:FDT55AN06LA0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-4
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	8.9W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	46mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1130pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12.1A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V