FDZ191P Description

The ON FDZ191P P-Channel MOSFET is designed on an innovative 1.5V PowerTrench process with state-of-the-art "low pitch" WLCSP packaging method, reducing PCB area and rDS (on). This sophisticated WLCSP MOSFET incorporates a packaging innovation, allowing the device to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS(on).

FDZ191P Features

Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted to PCB
RoHS Compliant
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A

FDZ191P Applications
Load Switch
Load Switch
Battery Protection
Battery Management