FDZ5047N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDZ5047N Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
36-VFBGA
Supplier Device Package
36-BGA (5x5.5)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.8W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4993pF @ 15V
Current - Continuous Drain (Id) @ 25°C
22A Ta
Gate Charge (Qg) (Max) @ Vgs
73nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
FDZ5047N Product Details
FDZ5047N Description
The FDZ5047N reduces PCB space and RDS by utilizing Fairchild's 30V PowerTrench technology and cutting-edge BGA packaging (ON). Such BGA Packaging innovation is the MOSFET. the device's technology enables it to combine high current, excellent thermal transfer properties low gate, ultra-low profile packing, and handling capacity low RDS and a charge (ON). These MOSFETs provide quicker switching and less power consumption.
FDZ5047N Features
Ultra-low gate charge x RDS(ON) product
Outstanding thermal transfer characteristics
22 A, 30 V. RDS(ON) = 2.9 m? @ VGS = 10 V
RDS(ON) = 4.5 m? @ VGS = 4.5 V
Ultra-thin package: less than 0.90 mm in height when mounted to PCB
Occupies only 27.5 mm2 of PCB area: 1/5 of the area of a TO-220 package