FFB5551

new-10%

Manufacturer part number:FFB5551

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE

Case Package:SOT-23

Datasheet:FFB5551 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	160V
Max Power Dissipation	200mW
Terminal Form	GULL WING
Current Rating	200mA
Frequency	300MHz
Base Part Number	FFB5551
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	200mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	300MHz
Transistor Type	2 NPN (Dual)
Collector Emitter Voltage (VCEO)	160V
Max Collector Current	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	160V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	200mV
Max Breakdown Voltage	160V
Collector Base Voltage (VCBO)	180V
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free